Advances in X-Ray Analysis: Volume 34 by Peter Wobrauschek, Peter Kregsamer, Christina Streli, PDF

By Peter Wobrauschek, Peter Kregsamer, Christina Streli, Hannes Aiginger (auth.), Charles S. Barrett, John V. Gilfrich, I. C. Noyan, Ting C. Huang, Paul K. Predecki (eds.)

ISBN-10: 1461366674

ISBN-13: 9781461366676

ISBN-10: 1461537444

ISBN-13: 9781461537441

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Extra info for Advances in X-Ray Analysis: Volume 34

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I also wish to thank the PF staff for their help during the study. REFERENCES 1. Feidenhans'l: 2. 3. 4. 5. 6. Surface structure determination by X-ray diffraction, Surface Science Rep. Greaves, Glancing angle X-ray absorption spectroscopy, these proceedings Y. Horiuchi, Optical flats for use in X-ray spectrochemical microanalysis, Rev. Sci. Instr. Wobrauschek: Total reflectance X-ray spectrometry, in: "Adv. ," vol. Eisenberger, Concentration profile of a dissolved polymer near the air-liquid interface: X-ray fluorescence study, Phys.

2 I >< 6 Glancing Angle I mrad ) Fig. 5 Intensities of reflected X-rays, Ga K, As K and In L fluorescent X-rays from a processed InP substrate. 6 ke y9. 4. After the deposition process, the Ga K fluorescence intensity below the critical angle was strong, compared with that at the higher-angle side. From an analysis, it was estimated that the Ga or Ga compound (probably Ga oxide) was precipitated to a depth of a few ~m below the surface. 2(c)). m. The next example is a thin contamination layer. 9 An InP substrate was contaminated with Ga and As during liquid-phase epitaxial growth, which was the fabrication process of a distributed feedback lasers.

As Koc intensity vs. angle of incidence 1/1 for Si implanted with 6 x 1015 atoms cm- 2 As: experimental points compared with theory using profile measured by SIMS (full line) and using 120 nm wide rectangular profile (dotted). G. DE BOER AND W. W. VAN DEN HOOGENHOF ~,-----------------------, ~~----------------------. -·..... _~ .............. "'ci - 10 ci g •.. 0 0 ......... ---~. 0 1/J (mrad) Fig. 3. Co KIX intensity vs. angle of incidence 1/1 for 1 run Co on Si: experimental points compared with theory (full line).

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Advances in X-Ray Analysis: Volume 34 by Peter Wobrauschek, Peter Kregsamer, Christina Streli, Hannes Aiginger (auth.), Charles S. Barrett, John V. Gilfrich, I. C. Noyan, Ting C. Huang, Paul K. Predecki (eds.)


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